15N120NDH Transistor IGBT with Diode 1200V 15A Transistor
Specifications
Collector-Emitter Voltage: 1200V
Collector Current: 15A
Storage Temperature Range: -55 to + 150
Diode Continuous Forward Current: 15A
89.00(Incl. Tax)
The power rating of this device, an IGBT with a diode, is 1200 V and 40 A. It is a tool that manages and controls the current that flows through an electric circuit. This component can be used to control the voltage, current, and power in an electrical circuit. IGBT transistor, 1200 V, 15 A, and a diode The transistor is designed to resist short circuits, overvoltage, and voltage spikes. It is built utilizing a non-inductive N-channel MOSFET with fast switching capabilities. It has an output diode, which provides a rapid power path for the system. This device is ideal for applications requiring a higher switching frequency and/or lower voltage. Voltage regulation in the electrical grid is accomplished by power transistors of the type utilized in this product. It is used for both low and high voltage control. This type of power transistor can be used to regulate the voltage and current in a circuit. This type of power transistor is known as an IGBT, or insulated-gate bipolar transistor.
Features
High speed switching
High system efficiency
Soft current turn-off waveforms
Extremely enhanced avalanche capability
